Suppressing void defects in long wavelength semipolar ð2021Þ InGaN quantum wells by growth rate optimization

MOVPE Growth of Semipolar GaN on Patterned Sapphire Wafers: Growth Optimisation and InGaN Quantum Wells

We are able to achieve two different GaN semipolar surfaces by growing on patterned sapphire substrates: (101̄1) GaN on (112̄3) sapphire and (112̄2) on (101̄2). By this approach, the growth of a coalesced semipolar layer on a large area of about two inches diameter is possible. Well known from the c-plane direction, an in-situ deposited SiN interlayer could reduce the defect density also in semipol...

Stacking faults and interface roughening in semipolar ( 20 2 ̄ 1 ̄ ) single InGaN quantum wells for long wavelength emission

Near-field investigation of spatial variations of ð20 2 1Þ InGaN quantum well emission spectra

Scanning near-field optical spectroscopy was applied to semipolar ð20 2 1Þ InGaN/GaN quantum wells (QWs) to evaluate spatial homogeneity of QW band gap and its dependence on the growth conditions. In the most uniform QW, photoluminescence (PL) spectra were found to be narrow with small peak wavelength and spectral width variations. A QW grown at reduced temperature showed sub-micrometer size PL...

Atomic-scale nanofacet structure in semipolar ð20 2 1Þ and ð20 21Þ InGaN single quantum wells

Atomic-scale nanofacets were observed in semipolar ð20 2 1Þ and ð20 21Þ InGaN quantum wells (QWs)/GaN quantum barriers interfaces. Transmission electron microscopy studies showed that these nanofacets were mainly composed of ð10 10Þ, ð10 1 1Þ; and ð10 11Þ planes, which led to significant fluctuations in QW thickness. Atom probe tomography studies were carried out to visualize the nanofacet stru...

Semipolar InGaN/GaN Converters for Bright Green Emission and Stripe LEDs 59 Semipolar InGaN/GaN Converters for Bright Green Emission and Stripe Light Emitting Diodes

Optically pumped green converter structures based on three-dimensional (3D) inverse pyramids were studied. The green emission intensity is determined by the conversion rate ηc and the absorption fraction ηa, indicating the InGaN/GaN quantum well (QW) crystal quality and its absorption capability, respectively. 15 was found to be the optimal QW number based the epitaxial condition for that serie...